爱普生晶振热销型号TG5032CGN，是爱普生10脚贴片晶振，超高精度5032温补晶体振荡器的热销型号之一，有源晶振，支持CMOS输出电平，具有超高输出稳定性，其频率容差仅为±1.0X10-6，电源电压:2.375V至3.63V，频率范围10MHz至40MHz，频率温度的稳定度极好，温度适应能力强，可在宽温下稳定工作。具有小体积晶振，轻薄型，低电源电压，低抖动，低功耗，低损耗，低耗能，低相位噪声等特点，无铅，符合欧盟RoHS指令。应用于小型基站，无线通讯设备，网络系统，GPS，蓝牙，包括紧凑型系统的参考时钟、Stratum3、超小型蜂窝基站和网络系统等应用领域。
TG5032CGN晶振X1G005231001500用于超小型蜂窝基站应用领域
| 产品编码 |
                                                                                                                                                                     型号
|
         频率
|
         贴片晶振
|
         输出波
|
         电源电压
|
       精度
|
                                                                                                                                                                                                X1G005231000400
|
TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231000500 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231000900 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231001000 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231001100 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231001200 | TG5032CGN | 12.800000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231001300 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231001500 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231001600 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231001700 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231001900 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231002000 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231002300 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231002500 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231002600 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231002700 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231002800 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231002900 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231003000 | TG5032CGN | 38.880000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231003100 | TG5032CGN | 38.880000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231003200 | TG5032CGN | 19.200000MHz | 5.00x3.20x1.45mm | CMOS | 2.700 to 3.000 V | +/-1.0 ppm |
| X1G005231003300 | TG5032CGN | 19.200000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231003400 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231003500 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231003600 | TG5032CGN | 19.440000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231003700 | TG5032CGN | 30.720000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231003900 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231004100 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231004200 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231004300 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231004400 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231004600 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231004700 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231004800 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 2.375 to 2.625 V | +/-1.0 ppm |
| X1G005231004900 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
| X1G005231005000 | TG5032CGN | 26.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm |
TG5032CGN晶振X1G005231001500用于超小型蜂窝基站应用领域
主要特点：
频率范围：10MHz至40MHz（标准频率10MHz、19.2MHz、20MHz、25MHz、30.72MHz、40MHz）
输出波形：CMOS晶体振荡器
电源电压：3.3V Typ.
频率温度特征：± 0.1ppm Max. (-40℃~ +85℃)
频率老化：± 3.0ppmMax. / 20 years
外部尺寸：5.0x3.2x1.45mm (10引脚)
应用：Small Cells, Stratum3, SyncE, IEEE1588
特性：超高精度, 宽温度范围
温补晶振即温度补偿晶体振荡器（TCXO），本身具有温度补偿作用，是通过附加的温度补偿电路使由周围温度变化产生的振荡频率变化量削减的一种石英晶体振荡器，高低温度稳定性:频率精度0.5PPM~2.0PPM,常用频率:26M,33.6M,38.4M,40M.因产品性能稳定,精度高等优势,被广泛应用到一些比较高端的数码通讯产品领域,GPS全球定位系统,智能手机,WiMAX和无线通信等产品,符合RoHS/无铅.
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