瑞康晶振,QEN55-BHRIDT50SB/T10MHZ,XO振荡器,6GWIFI晶振

瑞康晶振,QEN55-BHRIDT50SB/T10MHZ,XO振荡器,6GWIFI晶振，尺寸20.7*13.1mm,频率为10MHZ，有源晶体振荡器，低电压晶振，高性能晶振，OSC晶振，进口有源晶振，该晶体振荡器是基于DIL封装的混合技术。该XO执行+/‐50至+/‐100pm的整体频率稳定性(相对于温度范围和校准在25°C，负载和电源的变化)和老化+/‐5ppm每年。

有源晶振产品适用于坚固耐用的无线电系统，例如高速列车或航空电子设备。推荐用于嵌入式应用，扩展温度范围和坚固的环境。瑞康晶振,QEN55-BHRIDT50SB/T10MHZ,XO振荡器,6GWIFI晶振.

瑞康晶振,QEN55-BHRIDT50SB/T10MHZ,XO振荡器,6GWIFI晶振 参数表

Operating Temperature	Temperature option DT	‐40	25	85	°C
	Temperature option AY	‐55	25	125	°C
Switch‐on Temperature	TSo	‐55		125	°C
Non‐Operating Temperature	TNOp	‐55		125	°C
Random Vibration	Level as per MIL‐STD‐ 202, Method 214, Condition I‐ F (20 Grms)
Sine Vibration	Level as per MIL‐STD‐ 202, Method 204, Condition E (50G)
Shocks	Mechanical shock as per MIL‐STD‐ 202, Method 213, cond A (half sine with a peak acceleration of 300g for duration of 3 msec)
Acceleration	Acceleration as per MIL‐STD‐883, Method 2001, condition A (5000g, during 60s in Y1)

Operating Temperature Temperature option DT ‐40 25 85 °C

Temperature option AY ‐55 25 125 °C

Switch‐on Temperature TSo ‐55 125 °C

Non‐Operating Temperature TNOp ‐55 125 °C

Random Vibration Level as per MIL‐STD‐ 202, Method 214, Condition I‐ F (20 Grms)

Sine Vibration Level as per MIL‐STD‐ 202, Method 204, Condition E (50G)

Shocks Mechanical shock as per MIL‐STD‐ 202, Method 213, cond A (half sine with a peak
acceleration of 300g for duration of 3 msec)

Acceleration Acceleration as per MIL‐STD‐883, Method 2001, condition A (5000g, during 60s in Y1)

ParametersConditions/RemarksMinTypMaxUnit

Nominal Frequency 1.5 100 MHz

Steady state input current
power 20 mA

Global Frequency stability (1) Absolute frequency drift option 50 ± 50 ppm

Absolute frequency drift option 100 ± 100 ppm

Initial frequency accuracy ± 15 ppm

Frequency‐temperature
stability Temperature option DT ± 20 ppm

Temperature option AY ± 25 ppm

Frequency variation vs.
supply voltage Over Operating Temperature ± 3 ppm

Frequency variation vs. load Over Operating Temperature ± 5 ppm

Frequency ageing Over 15 years ± 12 ppm

Start up time 10 ms

Output waveform AHCMOS compatible Square

Output level
VOL Supply option BH 0.4 V

Supply option AH 0.5 V

Output level
VOH Supply option BH 2.4 V

Supply option AH 4.5 V

Duty cycle 40 60 %

Option R 45 55 %

Rise time 10%‐90% of Vcc, frequency < 10 MHz 10 ns

10%‐90% of Vcc, frequencyN10 MHz 5 ns

Fall time 90%‐ 10% of Vcc, frequency < 10 MHz 10 ns

90%‐ 10% of Vcc, frequency ≥ 10 MHz 5 ns

瑞康晶振,QEN55-BHRIDT50SB/T10MHZ,XO振荡器,6GWIFI晶振 尺寸表